Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having a chipwhich has a pad, a bump electrode formed on the pad, and a wire whosestitch bonding is performed on the bump electrode, and its manufacturingmethod.

2. Background ArtBackground Art

When performing stitch bonding of a gold wire on an aluminum pad on achip directly, load of a capillary concentrates and a crack enters intoSiO2 interlayer insulation film under the aluminum pad. For this reason,a bump electrode is used for the wire bonding between a chip and a chip(chip-to-chip) (for example, refer to Japanese Unexamined PatentPublication No. 2001-15541). Further, in a thin package, in order tomake the height of a gold wire low, reverse bonding using a bumpelectrode is performed.

FIGS. 10A and 10B are sectional views showing the state of conventionalbump electrode formation. First, as shown in FIG. 10A, bump electrode 14is formed on aluminum pad 11 of a chip with gold wire 13 discharged fromcapillary 12. Then, as shown in FIG. 10B, gold wire 13 is cut by pullingupward, while holding both sides of gold wire 13 by clamper 15.

FIGS. 11A and 11B are sectional views showing the state of conventionalstitch bonding of a gold wire onto a bump electrode. First, as shown inFIG. 11A, gold wire 13 is crushed by pushing and pressing gold wire 13to bump electrode 14 and applying supersonic vibration by capillary 12,and gold wire 13 is joined to bump electrode 14. Then, as shown in FIG.11B, gold wire 13 is cut by pulling upward, while holding both sides ofgold wire 13 by damper 15.

However, since the gold wire used as a material of bump electrode 14 issoft in the conventional formation of a bump electrode with a gold wireand conventional stitch bonding of a gold wire onto a bump electrode,crush of gold wire 13 held by capillary 12 and bump electrode 14 becomesinsufficient, so that gold wire 13 cannot become sufficiently thin.Hereby, since the strength of gold wire 13 becomes high, the distortionof gold wire 13 by the reaction at the time of cutting gold wire 13, andthe peeling of bump electrode 14 from aluminum pad 11 occur. The samephenomenon is generated also in the conventional bump electrodeformation. As a result, there was a problem of gold wires havingelectrically short-circuited with S character deflection of gold wire 13resulting from distortion, and opening electrically by peeling of bumpelectrode 14.

What is necessary is just to use the soft type gold wire cut by lowerload, in order to solve this problem. However, since the modulus ofelasticity is low, the such soft type gold wire had the problem that agold wire flowed when sealing resin was poured, and gold wireselectrically short-circuited.

SUMMARY OF THE INVENTION

The present invention was made in order to solve the above problems. Apurpose is to obtain the semiconductor device and its manufacturingmethod which can protect electric short circuit of wires and peeling ofa bump electrode, and can be stably manufactured.

A semiconductor device according to claim 1 comprises a chip which has apad; a bump electrode formed on the pad; and a wire whose stitch bondingis made on the bump electrode; wherein the wire satisfies a condition:(modulus-of-elasticity/breaking strength per unit area) ≧400.

A manufacturing method of a semiconductor device according to claim 3comprises the steps of: forming a bump electrode on a pad with a wirepassed to a capillary; operating the capillary in a horizontal directionwith an amplitude at least more than a clearance between the wire, andan inner wall of the capillary after the step of forming the bumpelectrode; and cutting the wire by pulling upward, holding both sides ofthe wire by a damper after the step of operating the capillary in ahorizontal direction; wherein as the wire, what satisfies a condition:(modulus-of-elasticity/breaking strength per unit area) ≧400 is used.

A manufacturing method of a semiconductor device according to claim 4comprises the steps of: performing stitch bonding of a wire on a bumpelectrode using a capillary; operating the capillary in a horizontaldirection with an amplitude at least more than a clearance between thewire, and an inner wall of the capillary after the step of performingstitch bonding; and cutting the wire by pulling upward, holding bothsides of the wire by a damper after the step of operating the capillaryin a horizontal direction; wherein as the wire, what satisfies acondition: (modulus-of-elasticity/breaking strength per unit area) ≧400is used.

The features and advantages of the present invention may be summarizedas follows.

The features and advantages of the present invention may be summarizedas follows. Since a wire can be cut with a low load, maintaining themodulus of elasticity of the wire, electric short circuit of wires andpeeling of a bump electrode are prevented, so that the highly integratedsemiconductor device can be stably manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a sectional view showing an example of the semiconductordevice concerning First Embodiment of the present invention.

FIG. 1B is a top view showing an example of the semiconductor deviceconcerning First Embodiment of the present invention.

FIGS. 2A-2C are sectional views showing the step which forms a bumpelectrode.

FIGS. 3A and 3B are sectional views showing the step which performsstitch bonding of a gold wire on a bump electrode;

FIG. 4 is a drawing showing the relation between an elongationpercentage of a gold wire, and the stress.

FIGS. 5A and 5B are drawings showing the elongation percentage of a goldwire, and the flow curvature of a gold wire.

FIG. 6A is a sectional view showing another example of the semiconductordevice concerning First Embodiment of the present invention.

FIG. 6B is a top view showing another example of the semiconductordevice concerning First Embodiment of the present invention.

FIG. 7A is a sectional view showing still another example of thesemiconductor device concerning First Embodiment of the presentinvention.

FIG. 7B is a top view showing still another example of the semiconductordevice concerning First Embodiment of the present invention.

FIGS. 8A-8D are sectional views showing the manufacturing method of thesemiconductor device concerning Second Embodiment of the presentinvention.

FIGS. 9A-9D are sectional views showing the manufacturing method of thesemiconductor device concerning Third Embodiment of the presentinvention.

FIGS. 10A and 10B are sectional views showing the state of conventionalbump electrode formation.

FIGS. 11A and 11B are sectional views showing the state of conventionalstitch bonding of a wire onto a bump electrode.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIG. 1A is a sectional view showing an example of the semiconductordevice concerning First Embodiment of the present invention, and FIG. 1Bis the top view. Chip 22 and chip 23 are mounted on die pad 21, beingput in order. These chips 22 and 23 and lead 24 are connected by goldwire 13. Further, bump electrode 14 is formed on aluminum pad 11 of chip23. And ball bonding of the gold wire 13 is performed on the aluminumpad of chip 22, and the stitch bonding is performed on bump electrode14. Furthermore, the whole is sealed with sealing resin 25.

FIGS. 2A-2C are sectional views showing the step which forms a bumpelectrode. First, as shown in FIG. 2A, gold ball 32 with a largerdiameter than gold wire 13 is formed by melting the tip of gold wire 13discharged from capillary 12 by discharge from blowpipe 31. Then, asshown in FIG. 2B, gold ball 32 is pushed and pressed by capillary 12 onaluminum pad 11 of chip 23 arranged on a stage. And the interface ofaluminum pad 11 is joined to gold ball 32 by applying load, heat,supersonic wave, etc. Then, as shown in FIG. 2C, by holding both sidesof gold wire 13 above capillary 12 and pulling by clamper 15, gold wire13 is cut above gold ball 32. Thus, bump electrode 14 is formed onaluminum pad 11 with gold wire 13 discharged from capillary 12.

FIGS. 3A and 3B are sectional views showing the step which performsstitch bonding of a gold wire on a bump electrode. First, gold ball 32is formed at the tip of gold wire 13 discharged from capillary 12 likeFIG. 2A, and as shown in FIG. 3A, ball bonding (first bonding) of thegold ball 32 at the tip of gold wire 13 is performed on an aluminum padof chip 22 using capillary 12. Then, gold wire 13 prolonged from goldball 32 is discharged from capillary 12, and lengthened onto bumpelectrode 14. And the stitch bonding (second bonding) of a part of goldwires 13 prolonged from gold ball 32 is performed on bump electrode 14,pushing and pressing gold wire 13 for 10 ms (milli seconds) to bumpelectrode 14 by capillary 12, and applying supersonic vibration. And asshown in FIG. 3B, gold wire 13 is cut (tail cut) by pulling upward,holding both sides of gold wire 13 by clamper 15. Thus, gold wire 13which electrically connects the aluminum pad of chip 22 with bumpelectrode 14 is formed with gold wire 13 discharged from capillary 12.

Here, in the present invention, in order to prevent electric shortcircuit of wires, and peeling of the bump electrode, a material of goldwire 13 is set up as follows. First, FIG. 4 is a drawing showing therelation of elongation percentage and stress of a gold wire. Whentensile stress is applied in the length direction, gold wire A is cutwhen an elongation percentage becomes 4%, and the stress at that time(breaking strength) is 12.4 gf. Similarly, when an elongation percentageis 7% with gold wire B, breaking strength is 9.5 gf, when an elongationpercentage is 11% with gold wire C, breaking strength is 8.8 gf, andwith gold wire D, when an elongation percentage is 15%, breakingstrength is 8.3 gf. And gold wire E is a soft type gold wire, and itsbreaking strength is low compared with hard type gold wire A-D.

When the stress is applied, at first, a gold wire will perform elasticdeformation and will perform plastic deformation after that. Theinclination in the case of this elastic deformation is equivalent to themodulus of elasticity of a gold wire. And the moduli of elasticity ofhard type gold wire A-D are 9.4, 9.3, 9, and 8.5 (x103 kgf/mm2),respectively, and soft type gold wire E has a low modulus of elasticitycompared with these.

In order to prevent the distortion (deformation) of a gold wire by thereaction at the time of cutting the gold wire, and the peeling fromaluminum pad 11 of bump electrode 14, it is preferred to use a gold wirewith low breaking strength. This is because the maximum load which willbe applied by the time of fracture is small and the energy released asreaction at the time of fracture is small with a wire with low breakingstrength. In order to prevent deformation of a gold wire, a gold wirewith a high modulus of elasticity is preferred. This is because the wirewith a high modulus of elasticity can more suppress the deformation atthe time of energy being applied. Therefore, the one where the ratio ofa modulus of elasticity to the breaking strength per unit area, i.e.,(the modulus of elasticity (kgf/mm2)/breaking strength per unit area(kgf/mm2)) is higher is preferred. However, there is an inclination forthe wire with a high modulus of elasticity to have high breakingstrength like the above-mentioned gold wire A, and for the wire with lowbreaking strength to have a low modulus of elasticity like theabove-mentioned gold wire E. Then, what fulfills the following conditionas a gold wire is used.(A modulus of elasticity (kgf/mm2)/breaking strength per unit area(kgf/mm2)) ≧400

Since a wire can be cut by low load by this, maintaining the modulus ofelasticity of a wire, the electric short circuit of the wiresaccompanying deformation of a wire and the peeling of a bump electrodeare prevented, so that the highly integrated semiconductor device can bestably manufactured. In particular, in material with as high elongationpercentage of the wire at the time of fracture as at least 6% or more,more preferably 10% or more, it becomes easy to obtain thecharacteristics of the rate of high elasticity and low breaking strengthlike gold wire B, C, and D.

Further, in the present invention, in order to prevent gold wires fromelectrically short-circuiting with flowing when sealing resin is poured,the material of sealing resin is set up as follows. First, FIGS. 5A and5B are the drawings showing the relation between the elongationpercentage of a gold wire, and the flow curvature of a gold wire. Theflow curvature of a gold wire is the curvature of the gold wire flowed,when sealing with sealing resin. FIG. 5A is a case where the resin whosespiral flow is less than 110 cm and whose viscosity is 10 Pa·S or moreis used. FIG. 5B is a case where the resin whose spiral flow is 110 cmor more and whose viscosity is less than 10 Pa·S is used.

Here, the measurement of melt viscosity is based on JIS K7210, and as ameasurement condition, the amount of a sample shall be 3 g, atemperature level shall be 175±2° C., and a nozzle dimension shall be(1.00±0.02) mm φ×10 mm. Spiral flow is a length which resin reaches,when resin is filled up under certain conditions into the flow testmetal mold having a spiral shape. This spiral flow can estimate thefluidity of the resin in injection molding.

The metal mold specified to EMMI-1-66 and a transfer-molding machine areused for measurement of spiral flow as a measuring apparatus. Further, atest sample is measured after being taken out from a preservationwarehouse, leaving as it is under a room temperature for 2 hours beingunopened, and opening after that. And the test is completed within 2hours after opening. Further, as measurement conditions, an amount of asample is set as about 15 g, setting cull thickness as about 3 mm,injection pressure as 6.9±0.5 MPa, molding time as 120±5 seconds,preheating as off, and temperature level as 175±2° C. Under theseconditions, a sample is inserted after checking having reached theprescribed temperature level, a plunger is dropped promptly, andapplication of pressure is started within 10 seconds. And a metal moldis disassembled after termination of a prescribed period, and spiralflow is measured by reading the flow length (cm) of resin.

Compared with FIG. 5A, the flow curvature of a gold wire is small inFIG. 5B. Therefore, in order to prevent gold wires from electricallyshort-circuiting with a gold wire's flowing when sealing resin ispoured, it is preferred to use the resin whose spiral flow is 110 cm ormore and whose viscosity is less than 10 Pa·S.

FIG. 6A is a sectional view showing another example of the semiconductordevice concerning First Embodiment of the present invention, and FIG. 6Bis the top view. On glass epoxy wiring substrate 41, chip 42, spacerchip 43, chip 44, and chip 45 are mounted. Bump electrodes 14 are formedon aluminum pads 11 of chips 44 and 45. And ball bonding of gold wire 13is performed on lead 46, and the stitch bonding is performed on bumpelectrode 14. The whole is sealed with sealing resin 47 and solder balls48 are formed on the bottom face of glass epoxy wiring substrate 41.

FIG. 7A is a sectional view showing still another example of thesemiconductor device concerning First Embodiment of the presentinvention, and FIG. 7B is the top view. Chip 52 is mounted on die pad51. And a plurality of aluminum pads 11 are formed at the center of chip52 at one row. Bump electrode 14 is formed on this aluminum pad 11. Andball bonding of the gold wire 13 is performed on lead 53, and the stitchbonding is performed on bump electrode 14. Further, the whole is sealedwith sealing resin 54.

Second Embodiment

FIGS. 8A-8D are sectional views showing a manufacturing method of thesemiconductor device concerning Second Embodiment of the presentinvention. First, as shown in FIG. 8A, bump electrode 14 is formed byjoining the gold ball at the tip of gold wire 13 discharged fromcapillary 12 on aluminum pad 11 of chip 23, However, the thing of thematerial same as gold wire 13 as First Embodiment is used.

And as shown in FIG. 8B, capillary 12 is raised by 15 μm. Here, sincethe height of bump electrode 14 is 15 μm, capillary 12 is evacuatedabove bump electrode 14. In the dimension of capillary 12 and gold wire13 which are used in the embodiment, the inside diameter of capillary 12is 30 μm, and the diameter of gold wire 13 is 23 μm.

Capillary 12 is made to reciprocate in a horizontal direction afterthat, as shown in FIG. 8C. However, the operational amplitude ofcapillary 12 is more than the clearance between gold wire 13, and theinner wall of capillary 12 at least. Since the diameter of gold wire 13is 23 μm and the inside diameter of capillary 12 is 30 μm concretely,the clearance between both is 3.5 μm at one side, when it is averaged,and when both sides are put together, it is 7 μm. It is necessary to bemore than 3.5 μm which is the one side clearance between capillary 12inner wall and gold wire 13 at worst as an amplitude of operation. Inorder to give sufficient stress to the tail cut portion of gold wire 13and to reduce cut strength, it is more preferred to be as an amplitudeof operation more than 7 μm which is the sum of the both sides ofclearance between capillary 12 inner wall and gold wire 13. Then, forexample, after performing 30 μm horizontal displacement of the capillary12 to one way, a counter direction is made to perform 65 μm horizontaldisplacement. Hereby, stress can be given to tail cut portion of goldwire 13, and cut strength can be reduced. It is also possible to cutgold wire 13 from bump electrode 14 by horizontal displacement dependingon the size of horizontal displacement.

After that, as shown in FIG. 8D, gold wire 13 is cut by pulling upward,holding both sides of gold wire 13 by clamper 15. On this occasion,since the strength of gold wire 13 is decreasing with the reciprocatingmotion of capillary 12, reaction of a cut of gold wire 13 can be reducedand S character deflection of gold wire 13 and peeling of bump electrode14 can be further suppressed rather than First Embodiment.

Bump electrode 14 contacting capillary 12 and bump electrode 14receiving a damage can be prevented in the case of a reciprocatingmotion, by evacuating capillary 12 above bump electrode 14 before thereciprocating motion of capillary 12.

The circular motion may be performed to a horizontal direction, insteadof making capillary 12 reciprocate to a horizontal direction. Inaddition, what is necessary is just the action comprising movement in ahorizontal direction, when decomposing into vectors. Although limitedfor neither the frequency of an oscillation, nor an operation means inparticular, since the amplitude of supersonic vibration is generallyless than 1 μm, it is difficult to obtain amplitude sufficient as anaction of capillary 12 for reducing the strength of gold wire 13. Inthis embodiment, the horizontal displacement action of theabove-mentioned capillary 12 was generated by making it operate,performing position control of the motor mechanically as the source ofpower.

Third Embodiment

FIGS. 9A-9D are sectional views showing a manufacturing method of asemiconductor device concerning Third Embodiment of the presentinvention. First, as shown in FIG. 9A, after performing ball bonding ofthe gold ball at gold wire 13 tip on the aluminum pad of chip 22 usingcapillary 12, stitch bonding of the gold wire 13 is performed on bumpelectrode 14 formed on aluminum pad 11 of chip 23. Concretely speaking,gold wire 13 is crushed pushing and pressing gold wire 13 for 10 ms tobump electrode 14 by capillary 12, and applying supersonic vibration,and gold wire 13 is joined to bump electrode 14. However, as gold wire13, the thing of the same material as First Embodiment is used.

After that, as shown in FIG. 9B, capillary 12 is evacuated more thanhalf of the amplitude of the horizontal direction action of capillary 12of later process in the loop advancement direction of gold wire 13. Forexample, horizontal displacement of the capillary 12 is performed by 30μm.

Capillary 12 is made to reciprocate in a horizontal direction likeSecond Embodiment after that, as shown in FIG. 9C. However, theamplitude of capillary 12 of operation is made at least to more than theclearance between gold wire 13, and the inner wall of capillary 12. Thatis, it is necessary to be more than 3.5 μm which is a one side clearancebetween capillary 12 inner wall and gold wire 13 at worst as anamplitude of operation. Further, in order to give sufficient stress totail cut portion of gold wire 13 and to reduce cut strength, it is morepreferred to be as amplitude of operation more than 7 μm which is thesum of both sides of the clearance between capillary 12 inner wall andgold wire 13. The amplitude of operation in this embodiment is 40 μm.

After that, as shown in FIG. 9D, gold wire 13 is cut by pulling upward,holding both sides of gold wire 13 by clamper 15. On this occasion,since the cut strength of gold wire 13 is reduced with the reciprocatingmotion of capillary 12, reaction of a cut of gold wire 13 can bereduced. S character deflection of gold wire 13 and peeling of bumpelectrode 14 can be further suppressed rather than First Embodiment. Itis also possible to cut gold wire 13 with a reciprocating motiondepending on the amplitude of a reciprocating motion of operation. Inthis case, S character deflection of a wire by reaction of a cut of goldwire 13 can be suppressed to the minimum.

Since capillary 12 is separated from the location which started stitchbonding, i.e., the location where gold wire 13 is contacting bumpelectrode 14 by more than half of the amplitude of a both-way actionbefore the reciprocating motion of capillary 12, in the reciprocatingmotion of capillary 12, giving of the stress to joining portion of goldwire 13 and bump electrode 14, and the portion of the root of gold wire13 can be reduced, and sharp strength lowering and an open circuit of agold wire can be prevented.

Obviously many modifications and variations of the present invention arepossible in the light of the above teachings. It is therefore to beunderstood that within the scope of the appended claims the inventionmay be practiced otherwise than as specifically described.

The entire disclosure of a Japanese Patent Application No. 2005-147674filed on May 20, 2005 including specification, claims, drawings andsummary, on which the Convention priority of the present application isbased, are incorporated herein by reference in its entirety.

1. A semiconductor device, comprising: a chip which has a pad; a bumpelectrode formed over the pad; and a wire whose stitch bonding is madeover the bump electrode; wherein the wire satisfies a condition:(modulus-of-elasticity/breaking strength per unit area) ≧400.
 2. Asemiconductor device according to claim 1, further comprising: sealingresin which seals the chip, the bump electrode, and the wire; wherein asfor the sealing resin, spiral flow is 110 cm or more, and viscosity isless than 10 Pa·S.
 3. A manufacturing method of a semiconductor device,comprising the steps of: forming a bump electrode over a pad with a wirepassed to a capillary; operating the capillary in a horizontal directionwith an amplitude at least more than a clearance between the wire, andan inner wall of the capillary after the step of forming the bumpelectrode; and cutting the wire by pulling upward, holding both sides ofthe wire by a clamper after the step of operating the capillary in ahorizontal direction; wherein as the wire, what satisfies a condition:(modulus-of-elasticity/breaking strength per unit area) ≧400 is used. 4.A manufacturing method of a semiconductor device, comprising the stepsof: performing stitch bonding of a wire over a bump electrode using acapillary; operating the capillary in a horizontal direction with anamplitude at least more than a clearance between the wire, and an innerwall of the capillary after the step of performing stitch bonding; andcutting the wire by pulling upward, holding both sides of the wire by adamper after the step of operating the capillary in a horizontaldirection; wherein as the wire, what satisfies a condition:(modulus-of-elasticity/breaking strength per unit area) ≧400 is used.